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DISCRETE SEMICONDUCTORS
DATA SHEET
BAT56 Schottky barrier diode
Preliminary specification File under Discrete Semiconductors, SC01 December 1993
Philips Semiconductors
Philips Semiconductors
Preliminary specification
Schottky barrier diode
FEATURES * Low leakage current * Low turn-on and high breakdown voltage * Ultra-fast switching speed. DESCRIPTION Silicon epitaxial Schottky barrier diode with an integrated guard ring for stress protection. Intended for high speed switching, circuit protection and voltage clamping applications. The diode is encapsulated in a SOD123 SMD plastic package.
k a
BAT56
QUICK REFERENCE DATA SYMBOL VR IF VF IR Tj Cd PARAMETER continuous reverse voltage continuous forward current forward voltage reverse current junction temperature diode capacitance VR = 1 V IF = 1 mA VR = 60 V CONDITIONS MAX. 60 30 410 200 150 1.6 UNIT V mA mV nA C pF
PIN CONFIGURATION
MAM058
Top view
Fig.1 Simplified outline (SOD123) and symbol.
December 1993
2
Philips Semiconductors
Preliminary specification
Schottky barrier diode
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IFRM IFSM Tstg Tamb Tj PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature operating ambient temperature junction temperature tp 1 s; 0.5 tp < 10 ms CONDITIONS - - - - -65 -65 - MIN. MAX. 60 30 100 250 +150 +150 150
BAT56
UNIT V mA mA mA C C C
THERMAL RESISTANCE SYMBOL Rth j-a Note 1. Printed-circuit board mounting (SOD123 standard conditions). CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 0.1 mA IF = 1 mA IF = 15 mA V(BR)R IR Cd Note 1. Pulsed test: tp = 300 s ; = 0.02. reverse breakdown voltage reverse current diode capacitance IR = 10 A VR = 30 V; note 1 VR = 60 V; note 1 VR = 1 V; f = 1 MHz MIN. - - - 60 - - - MAX. 330 410 1 - 100 200 1.6 UNIT mV mV V V nA nA pF PARAMETER from junction to ambient; note 1 THERMAL RESISTANCE 500 K/W
December 1993
3
Philips Semiconductors
Preliminary specification
Schottky barrier diode
BAT56
10 2 IF (mA) 10
MRA803
10 2 IR (A) 10 (1)
MRA805
1 1 10 1 10 1 (1) 10 2 (2) (3) (4) 10 3 0 20 40
(2)
(3) 10
2
0
0.2
0.4
0.6
0.8 VF (V)
1
60 VR (V)
80
(1) (2) (3) (4)
Tamb = 125 C. Tamb = 85 C. Tamb = 25 C. Tamb = -40 C.
(1) (2) (3)
Tamb = 150 C. Tamb = 85 C. Tamb = 25 C. Fig.3 Reverse current as a function of reverse voltage.
Fig.2 Forward current as a function of forward voltage.
2 Cd (pF) 1.5
MRA804
1
0.5
0 0 20 40 60 VR (V) 80
f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage.
December 1993
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Philips Semiconductors
Preliminary specification
Schottky barrier diode
PACKAGE OUTLINE
BAT56
andbook, full pagewidth
17 o max (2x)
12 o max (2x)
0.55 0.40 1.35 max
0.19 0.12 0.1 max 0.25 min
1.7 1.4
0.70 0.50
,,, ,,, ,,, ,,, ,,,
5o max (2x) A
12 o max (2x)
MBA038 - 2
cathode colour band
2.85 2.55 3.85 3.55 0.2 M A
Dimensions in mm. Fig.5 SOD123.
December 1993
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Philips Semiconductors
Preliminary specification
Schottky barrier diode
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BAT56
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
December 1993
6
Philips Semiconductors
Preliminary specification
Schottky barrier diode
BAT56
NOTES
December 1993
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Printed in The Netherlands
9397 722 60011
Philips Semiconductors

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